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DCR720E
DCR720E
Phase Control Thyristor Preliminary Information
DS5485-1.2 February 2002
FEATURES
s s s
Double Side Cooling High Surge Capability Low Inductance Internal Construction
KEY PARAMETERS 1800V VDRM 724A IT(AV) 9800A ITSM dV/dt* 1000V/s dI/dt 700A/s
*Higher dV/dt selections available
APPLICATIONS
s s s
High Power Converters DC Motor Control High Voltage Power Supplies
VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VDRM V 1800 1600 1400 1200 Conditions
DCR720E18 DCR720E16 DCR720E14 DCR720E12
Tvj = 0 to 125C, IDRM = IRRM = 30mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Outline type code: E (See Package Details for further information) Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR720E16 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DCR720E
CURRENT RATINGS
Tcase = 60C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 724 1140 1025 A A A Parameter Test Conditions Max. Units
Single Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 500 790 670 A A A
Tcase = 80C unless stated otherwise. Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 570 895 790 A A A Parameter Test Conditions Max. Units
Single Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 390 610 505 A A A
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DCR720E
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Test Conditions 10ms half sine, Tcase = 125C VR = 50% VRRM - 1/4 sine 10ms half sine, Tcase = 125C VR = 0 Max. 7.8 0.3 x 106 9.8 0.48 x 106 Units kA A2s kA A2s
DYNAMIC CHARACTERISTICS
Symbol IRRM/IRRM dV/dt dI/dt Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tcase = 125C To 67% VDRM, Tj = 125C From 67% VDRM to 1100A Repetitive 50Hz Min. Max. 30 1000 350 700 Units mA V/s A/s A/s
Gate source 20V, 10, Non-repetitive tr 0.5s, Tj = 125C VT(TO) rT tgd Threshold voltage On-state slope resistance Delay time At Tvj = 125C At Tvj = 125C VD = 67% VDRM, gate source 10V, 5 tr = 0.5s, Tj = 25C tq Turn-off time IT = 500A, tp = 1ms, Tj =125C, VR = 50V, dIRR/dt = 20A/s, VDR = 67% VDRM, dVDR/dt = 20V/s linear IL IH Latching current Holding current Tj = 25C, VD = 5V Tj = 25C, VD = 5V
-
0.88 0.65 1.5
V m s
300
400
s
-
500 70
mA mA
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DCR720E
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 8.0kN Double side Min. -55 7.2 Max. 0.041 0.074 0.092 0.018 0.036 135 125 125 8.8 Units CW CW CW CW CW C C C kN
(with mounting compound) Single side Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table, gate characteristics curve Max. 3 150 0.25 30 0.25 5 10 100 5 Units V mA V V V V A W W
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DCR720E
CURVES
3000 Tj = 125C
1200
2500
1000
Instantaneous on-state current, IT(AV) - (A)
Mean power dissipation - (W)
2000
800
1500
600
1000
400
500
200
dc 1/2 wave 3 phase 6 phase 200 400 600 800 Mean on-state current, IT(AV) - (A) 1000
0 0.5
1.0 1.5 2.0 2.5 Instantaneous on-state voltage, VT - (V)
3.0
0 0
Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT A = 0.2366 B = 0.1182 C = 0.0005 D = -0.0019 these values are valid for Tj = 125C for IT 100A to 3000A Where
Fig.3 Power dissipation
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DCR720E
10000 Conditions: Tj = 125C VR = 50V tp = 1ms
100
Table gives pulse power PGM in Watts
Pulse width s 20 25 100 500 1ms 10ms Frequency Hz 400 50 100 100 100 100 100 100 100 100 100 100 25 100 100 12.5 100 50 10 -
0W 10 W 50
W 20 W 10 5W
IT = 1500A IT = 500A
Gate trigger voltage, VGT - (V)
Recovered charge, QR - (C)
10
1000
Up
lim per
it 9
5%
1 Region of certain triggering
QR tp dIT/dt IRM 0.25xIRM
VGD
e L ow
r lim
it 5%
100 0.1
1.0 10 Rate of decay of on-state current, dIT/dt - (A/s)
100
0.1 0.001
0.01
Tj = 125C
0.1
Tj = 25C Tj = -40C
IT
1
Gate trigger current, IGT - (A)
10 IFGM
Fig.4 Stored charge
Fig.5 Gate characteristics
0.1
Anode side cooled
25
0.75
Thermal Impedance - junction to case - (C/W)
20
0.6
Double side cooled
Peak half sine on-state current - (kA)
I2t value - (AVs x 106)
15
0.45
0.01
10
0.3
Conduction
Effective thermal resistance Junction to case C/W Double side 0.041 0.044 0.051 0.061 Anode side 0.074 0.077 0.084 0.093
5
ITSM (VR = 0) ITSM (VR = 50% VRRM) I2t (VR = 0) I2t (VR = 50% VRRM)
0.15
d.c. Halfwave 3 phase 120 6 phase 60
0.001 0.001
0
0 1 2 3 4 5 6 7 8 9 Pulse lenght, half sine wave (ms) 10
0.01
0.1 Time - (s)
1.0
10
Fig.6 Maximum (limit) transient thermal impedance junction to case (C/W)
Fig.7 Sub-cycle surge currents
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DCR720E
14 Surge current (VR = 0) 12 Surge current (VR = 50% VRRM)
Peak half sine wave on-state current - (kA)
10
8
6
4
2
0 0
10
20 30 40 number of cycles @ 50Hz
50
60
Fig.8 Multi-cycle surge currents
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DCR720E
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.6 0.1 x 2.0 0.1 deep (One in each electrode)
Cathode tab Cathode O42max O25nom. Gate
O1.5
30 15
15 14
O25nom.
Anode
Nominal weight: 82g Clamping force: 8kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outine type code: E
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DCR720E
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS5485-1 Issue No. 1.2 February 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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